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TRUMPF GmbH + Co. KG

Development Engineer RF Power Amplifier Design

Original title: Entwicklungsingenieur (w/m/d) RF Power Amplifier Design

TRUMPF GmbH + Co. KG
Freiburg, BW500+ employeesSkilled
Full-time
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This job is at TRUMPF GmbH + Co. KG. You apply to them, not to GoAusbildung.

  • Start Date

    On request

  • Sector

    High-tech / Electronics manufacturing

  • Salary

    Competitive salary

Listing data as of November 4, 2026

About this Apprenticeship

The TRUMPF Hüttinger site is a high-tech company and a world-leading manufacturer of DC, medium-frequency, high-frequency, and semiconductor-based solid-state microwave generators. We convert power into the required frequency and output. Our technologies are hidden in many areas of daily life and you encounter them more often than you think: for example in smartphones, on glass facades, in solar and PV systems, or in microchips for the computer and communications industries.

What You'll Learn

  • You develop and optimize high-power RF amplifiers for HF and VHF generators in the 1 kW to 100 kW range with enthusiasm, designing power amplifier architectures based on modern semiconductor technologies such as LDMOS and GaN
  • You specifically design output matching networks and matching structures to maximize efficiency and robustness. Your feel for electromagnetic relationships helps you achieve optimal results even with complex power-combining structures
  • Using simulation tools such as Keysight ADS and Ansys HFSS, you analyze and optimize RF circuits and electromagnetic structures. Load-pull, harmonic-balance, and EM simulations are part of your daily toolkit
  • From prototype to series maturity: you build RF power amplifiers, commission them, and characterize them using network analyzers, spectrum analyzers, and other measurement systems. Additionally, you develop automated measurement and test environments with Python
  • In close collaboration with teams from PCB design, mechanics, software development, and production, you drive the industrialization of new products. At the same time, you coordinate with international customers and jointly develop innovative RF solutions

Requirements

  • A completed degree in electrical engineering, communications engineering, physics, or a comparable field forms your technical basis – whether master's or doctorate, what matters are your competence and potential
  • Relevant experience in the development of RF power amplifiers or high-power RF circuits. Sound knowledge of RF circuit technology, electromagnetic field theory, and the design of matching networks and power-combining structures
  • You confidently apply your expertise in Keysight ADS, ideally complemented by experience with Ansys HFSS. You are equally at home with modern RF measurement technology and programming in Python
  • Very good English skills enable you to communicate confidently in international and interdisciplinary teams. Your structured, analytical way of working and your enjoyment of collaboration make you a valued team member
  • Particularly welcome are knowledge of multi-kilowatt RF systems, thermal design of high-power amplifiers, or experience with plasma, semiconductor, and industrial RF applications. An understanding of LDMOS and GaN power transistors is also seen as a valuable addition

What TRUMPF GmbH + Co. KG offers

  • Appreciative work environment in a family-owned company where diversity and equal opportunity are highly valued
  • Independent and structured work where you can contribute your ideas, make independent decisions, and actively shape processes
  • Extensive training and continuing education offerings that provide individual development opportunities and promote your professional and personal skills
  • Attractive additional benefits for your health and mobility, including Hansefit for fitness and Business Bike for sustainable and flexible transportation
  • Respectful and appreciative corporate culture where your commitment is recognized and you can unfold your full potential in a motivating work environment

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